Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layers

被引：8

作者：

Åberg, D ^{[1
]}

Hallén, A ^{[1
]}

Pellegrino, P ^{[1
]}

Svensson, BG ^{[1
]}

机构：

[1] Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden

来源：

APPLIED SURFACE SCIENCE | 2001年 / 184卷 / 1-4期

关键词：

ion implantation; passivation; point defects; 4H-SiC;

D O I：

10.1016/S0169-4332(01)00506-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ion implantation causes damage to the crystal lattice resulting in the loss of free charge carriers. In this study, low dose implantations using different ions and implantation doses are made to resolve the initial carrier loss in nitrogen-doped epitaxial layers. A strong dependence of compensation on nitrogen concentration is seen, showing that nitrogen is passivated by implantation-induced point defects. An activation energy of 3.2 eV for the dissociation of the passivated nitrogen center is obtained. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：263 / 267

页数：5

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