A study of resist outgassing as a function of differing photoadditives

被引：18

作者：

Houlihan, FM ^{[1
]}

Rushkin, IL ^{[1
]}

Hutton, RS ^{[1
]}

Timko, AG ^{[1
]}

Nalamasu, O ^{[1
]}

Reichmanis, E ^{[1
]}

Gabor, AH ^{[1
]}

Medina, AN ^{[1
]}

Malik, S ^{[1
]}

Neiser, M ^{[1
]}

Kunz, RR ^{[1
]}

Downs, DK ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2 | 1999年 / 3678卷

关键词：

resist outgassing; photoacid generators; 193; nm; 248; e-beam;

D O I：

10.1117/12.350209

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of different photoadditives in high and low activation energy resist resins on resist outgassing during lithographic exposure was studied by quartz microbalance and gas chromatography/ mass spectroscopy techniques. The resist outgassing was analyzed both qualitatively and quantitatively and structure-property relashionships were developed between resist outgassing and the molecular structure of photoacid generators and additives. The photoadditives examined include, aryl iodonium perfluoroalkylsulfonates, triarylsulfonium perfluoroakylsulfonates, photogenerators of sulfamic acids (Sweet PAG analogs), 2-nitrobenzyl PAG's and doxyl derivatives.

引用

页码：264 / 274

页数：11

共 23 条

[1]

Allen R. D., 1995, J PHOTOPOLYM SCI TEC, V8, P623

[2]

Allen RD, 1995, ACS SYM SER, V614, P255

[3] ALKOXY-SUBSTITUTED DIARYLIODONIUM SALT CATIONIC PHOTOINITIATORS [J].

CRIVELLO, JV ;

LEE, JL .

JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 1989, 27 (12) :3951-3968

[4] PHOTOCHEMISTRY OF TRIARYLSULFONIUM SALTS [J].

DEKTAR, JL ;

HACKER, NP .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1990, 112 (16) :6004-6015

[5] TRIPHENYLSULFONIUM SALT PHOTOCHEMISTRY - NEW EVIDENCE FOR TRIPLET EXCITED-STATE REACTIONS [J].

DEKTAR, JL ;

HACKER, NP .

JOURNAL OF ORGANIC CHEMISTRY, 1988, 53 (08) :1833-1835

[6]

Houlihan F. M., 1998, Journal of Photopolymer Science and Technology, V11, P419, DOI 10.2494/photopolymer.11.419

[7]

HOULIHAN FM, 1994, P SOC PHOTO-OPT INS, V2195, P137, DOI 10.1117/12.175331

[8] Recent advances in 193 nm single-layer photoresists based on alternating copolymers of cycloolefins [J].

Houlihan, FM ;

Wallow, T ;

Timko, A ;

Neria, E ;

Hutton, R ;

Cirelli, R ;

Nalamasu, O ;

Reichmanis, E .

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV, 1997, 3049 :84-91

[9] 193nm single-layer photoresists based on alternating copolymers of cycloolefins: the use of photogenerators of sulfamic acids [J].

Houlihan, FM ;

Kometani, JM ;

Timko, AG ;

Hutton, RS ;

Gabor, A ;

Medina, A ;

Biafore, J ;

Slater, S .

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 :73-82

[10] Synthesis of cycloolefin maleic anhydride alternating copolymers for 193 nm imaging [J].

Houlihan, FM ;

Wallow, TI ;

Nalamasu, O ;

Reichmanis, E .

MACROMOLECULES, 1997, 30 (21) :6517-6524

← 1 2 3 →