Amorphous SiO:H thin film visible light emitting diode

Undoped hydrogenated amorphous silicon oxide (a-SIO:H) was applied to the luminescent i-layer in the p-i-n junction amorphous thin film visible light emitting diode (TFLED) for the first time. The brightness obtained from the a-SiO:H is low compared with the hydrogenated amorphous silicon carbide and silicon nitride. However, the TFLEDs having boron-doped highly conductive a-SiO:H and microcrystalline (mu-c) SIO:H as the p-layers have a higher brightness by a factor of 5 compared with those with conventional boron doped a-SiC:H as the p-layer.