Doping mechanism in aluminum doped zinc oxide films

被引：100

作者：

Singh, AV

Mehra, RM

Yoshida, A

Wakahara, A

机构：

[1] Univ Delhi, Dept Elect Sci, New Delhi 110021, India

[2] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 07期

关键词：

D O I：

10.1063/1.1667259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The doping mechanism in aluminum doped zinc oxide films has been interpreted by considering the relationship between Hall mobility and effective mass of electrons with carrier concentrations. Both degeneracy and the nonparabolic nature of the conduction band are taken into account for determining the charge state of the dopant. It is ascertained that aluminum liberates one free carrier in the zinc oxide lattice by substituting the zinc atom. (C) 2004 American Institute of Physics.

引用

页码：3640 / 3643

页数：4

共 34 条

[1] Transport mechanisms of RF sputtered Al-doped ZnO films by H2 process gas dilution [J].