Hydrogen in 6H silicon carbide

6H polytype silicon carbide (SIG) samples of n-type have been implanted with 50 keV H+ ions and subsequently annealed at temperatures between 200 degrees C and 1150 degrees C. Using depth profiling by secondary ion mass spectrometry motion of hydrogen is observed in the implanted region for temperatures above 700 degrees C. A diffusion coefficient of similar to 10(-14) cm(2)/s is extracted at 800 degrees C with an approximate activation energy of similar to 3.5 eV. Hydrogen displays strong interaction with the implantation-induced defects and stable hydrogen-defect complexes are formed. These complexes anneal out at temperatures in excess of 900 degrees C and are tentatively identified as Carbon-Hydrogen centers at a Si vacancy.