Photoemission study of C60/Si(111) adsorption as a function of coverage and annealing temperature

被引:60
作者
Cepek, C
Schiavuta, P
Sancrotti, M
Pedio, M
机构
[1] INFM, Lab Nazl, TASC, I-34012 Trieste, Italy
[2] CNR, Ist Struttura Mat, I-34012 Trieste, Italy
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 03期
关键词
D O I
10.1103/PhysRevB.60.2068
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report core-level and valence-band (VB) photoemission data of C-60 molecules adsorbed at room temperature (RT) on Si(111). The measurements have been carried out as a function of C-60 coverage [from 0.20 monolayer (ML) up to 2.2 ML] and annealing temperature (from RT up to 1300 K). From the VB spectra no increasing of the Fermi-level photoemission intensity has been observed for all the coverages investigated thereby indicating that no charge transfer occurs at the interface. Remarkable changes take place on the 1-ML spectrum as the annealing temperature is increased up to the disruption of the C-60 cages and the following formation of SiC. [S0163-1829(99)02623-5].
引用
收藏
页码:2068 / 2073
页数:6
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