SiC and GaN wide bandgap semiconductor materials and devices

被引：76

作者：

Burk, AA ^{[1
]}

O'Loughlin, MJ

Siergiej, RR

Agarwal, AK

Sriram, S

Clarke, RC

MacMillan, MF

Balakrishna, V

Brandt, CD

机构：

[1] Northrop Grumman ESSD Adv Technol Lab, Baltimore, MD 21203 USA

[2] Northrop Grumman ESSD Sci & Technol Ctr, Pittsburgh, PA 15235 USA

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 08期

关键词：

D O I：

10.1016/S0038-1101(99)00089-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wide bandgap semiconducting materials are promising candidates for high-power, high-temperature, microwave and optoelectronic devices because of their superior thermal and electrical properties in comparison to conventional semiconductors. Recent developments in SIC and GaN materials and processing have enabled the demonstration of semiconductor devices with dramatically improved performance. Examples of these developments and new wide bandgap devices are presented. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：1459 / 1464

页数：6

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