Triazidogallium and derivatives: New precursors to thin films and nanoparticles of GaN

The synthesis and properties of [Ga(N-3)(3)](infinity) (1) and the related derivatives [(Do)(n)Ga(N-3)(3)] (2 a-d: Do = THF, NEt(3), NMe(3), quinuclidine, n = 1; 2e: Do = pyridine; n = 3), Li[(CH3)Ga(N-3)(3)] (3), [(N-3)(2)Ga{(CH2)(3)NMe(2)}] (4), [Cp(CO)(2)Fe-Ga(N-3)(2)(py)] (5), and [(CO)(4)Co-Ga(N-3)(2)(NMe(3))] (6) are reported. Compounds 2e and 4 were characterized by single-crystal X-ray diffraction. The deposition of polycrystalline GaN thin films from 2a-e by solution methods (spin-on pyrolysis) and the solid-state pyrolysis of I to give GaN nanoparticles are described.