RF characterisation of fully depleted SOI MOSFET with Si substrate removed

被引：3

作者：

Chen, CL ^{[1
]}

Burns, JA ^{[1
]}

Warner, K ^{[1
]}

Beard, WT ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 05期

关键词：

Radio frequency (RF) circuits;

D O I：

10.1049/el:20020167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon-on-insulator MOSFETs with Si substrate completely removed were characterised. The removal of the substrate, resulting in a 4.8 mum of wafer thickness, significantly reduced parasitic capacitance Mule retaining the device RF performance. This experiment demonstrates that RF circuits can be incorporated in a new three-dimensional integration technology.

引用

页码：256 / 257

页数：2

共 5 条

[1]

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[5]

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