a-Si:H/poly-Si tandem cells deposited by hot-wire CVD

被引：9

作者：

van Veen, MK ^{[1
]}

van Veenendaal, PATT ^{[1
]}

van der Werf, CHM ^{[1
]}

Rath, JK ^{[1
]}

Schropp, REI ^{[1
]}

机构：

[1] Univ Utrecht, Debye Res Inst, NL-3508 TA Utrecht, Netherlands

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

D O I：

10.1016/S0022-3093(01)01087-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Innovative multibandgap a-Si:H/poly-Si tandem solar cells have been developed. where the two absorbing layers have been deposited by hot-wire CVD. These n-i-p/n-i-p cells have been deposited on a flexible stainless steel substrate, where the microcrystalline doped layers are made by PECVD. No enhanced back reflector was applied. Although the bottom cell shows a shunting problem under low-light conditions, the best tandem cell has an efficiency of 8.1% under AM-1.5 illumination, a fill factor of 0.60. an open-circuit voltage of 1.18 V. and a short-circuit current density of 11.4 mA/cm(2). The total thickness of the tandem structure is only 1.1 mum. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1194 / 1197

页数：4

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