Source and drain parasitic resistances of amorphous silicon transistors: Comparison between top nitride and bottom nitride configurations

被引：17

作者：

Rolland, A ^{[1
]}

Richard, J ^{[1
]}

Kleider, JP ^{[1
]}

Mencaraglia, D ^{[1
]}

机构：

[1] ECOLE SUPER ELECT,LAB GENIE ELECT PARIS,F-91192 GIF SUR YVETTE,FRANCE

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 08期

关键词：

amorphous silicon; thin film transistors; field effect mobility; contact resistances;

D O I：

10.1143/JJAP.35.4257

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The source and drain parasitic resistances of amorphous silicon based thin film transistors (aSi:H TFT) are investigated using a very simple TFT model including a parameter extraction method. We show that this method provides an accurate measurement of these resistances and clearly explains their influence on the apparent field effect mobility mu(a) of the TFTs. We compare the parasitic resistances of TFTs for the top nitride (TN) and bottom nitride (BN) configurations and we show that the usual different performances observed on the two configurations can be mainly attributed to the differences in the parasitic resistances.

引用

页码：4257 / 4260

页数：4

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