Magnetron-sputtered AZO thin films on commercial ITO glass for application of a very low resistance transparent electrode

被引:22
作者
Fang, GJ [1 ]
Li, DJ [1 ]
Yao, BL [1 ]
机构
[1] Tsing Hua Univ, Natl Lab Integrated Optoelect, Dept Elect Engn, Beijing 100084, Peoples R China
关键词
D O I
10.1088/0022-3727/35/23/310
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we report a coating method of reducing the sheet resistance of commercial Sn-doped In2O3 (ITO) glass by DC magnetron sputtering, without reducing its optical transmittance in the visible range of spectra. Aluminium oxide doped zinc oxide (AZO) films deposited on ITO glass showed highly (002)-oriented textured structure. An experimental procedure was designed to minimize the sheet resistance of AZO/ITO films in the deposition parameter space (mainly deposition temperature). Resistivity measurements showed that the ITO films with AZO coated under optimized deposition conditions showed a significant 81.4% decrease of sheet resistance when compared with those formed without AZO. Room temperature Hall effect measurements showed that the Hall mobility of the combined layers was greatly increased compared with that for single layer ITO. A high quality transparent electrode, having a resistance as low as 4.13 Omega/square and a high optical transmittance of 80% in the visible spectral range (with substrate), was obtained. The bilayer AZO/ITO film glass may be a good alternative substrate to ITO glass for advanced electro-optic applications.
引用
收藏
页码:3096 / 3100
页数:5
相关论文
共 27 条
[1]   Structural, electrical, and optical properties of transparent conductive oxide ZnO:Al films prepared by dc magnetron reactive sputtering [J].
Chen, M ;
Pei, ZL ;
Wang, X ;
Sung, C ;
Wen, LS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (03) :963-970
[2]   ITO/Ag/ITO multilayer films for the application of a very low resistance transparent electrode [J].
Choi, KH ;
Kim, JY ;
Lee, YS ;
Kim, HJ .
THIN SOLID FILMS, 1999, 341 (1-2) :152-155
[3]  
Cullity B.D., 1978, ELEMENTS XRAY DIFFRA, V2nd, P102
[4]   FORMULATION OF A STATISTICAL THERMODYNAMIC MODEL FOR THE ELECTRON-CONCENTRATION IN HEAVILY DOPED METAL-OXIDE SEMICONDUCTORS APPLIED TO THE TIN-DOPED INDIUM OXIDE SYSTEM [J].
ELFALLAL, I ;
PILKINGTON, RD ;
HILL, AE .
THIN SOLID FILMS, 1993, 223 (02) :303-310
[5]   Resistivity of polycrystalline zinc oxide films: current status and physical limit [J].
Ellmer, K .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (21) :3097-3108
[6]   ZnO thin films prepared by remote plasma-enhanced CVD method [J].
Haga, K ;
Kamidaira, M ;
Kashiwaba, Y ;
Sekiguchi, T ;
Watanabe, H .
JOURNAL OF CRYSTAL GROWTH, 2000, 214 :77-80
[7]  
HAMBERG I, 1986, J APPL PHYS, V60, P123
[8]   Optical and electrical characteristics of aluminum-doped ZnO thin films prepared by solgel technique [J].
Jimenez-Gonzalez, AE ;
Urueta, JAS ;
Suarez-Parra, R .
JOURNAL OF CRYSTAL GROWTH, 1998, 192 (3-4) :430-438
[9]   Relationship between photoluminescence and electrical properties of ZnO thin films grown by pulsed laser deposition [J].
Jin, BJ ;
Woo, HS ;
Im, S ;
Bae, SH ;
Lee, SY .
APPLIED SURFACE SCIENCE, 2001, 169 :521-524
[10]  
*JOINT COMM POWD D, POWD DIFFR DAT, P29