Microstructure of rare-earth silicate/silicon carbide layered composites

被引：2

作者：

Goto, Y ^{[1
]}

Kato, M

Fukasawa, T

Kameda, T

机构：

[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Kawasaki, Kanagawa 2128582, Japan

[2] Toshiba Co Ltd, Power & Ind Syst Res & Dev Ctr, Yokohama, Kanagawa 2300045, Japan

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2002年 / 21卷 / 02期

关键词：

Layered composites;

D O I：

10.1023/A:1014284813042

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Microstructures around the interfaces of rare-earth silicate/silicon carbide layered composites were investigated by transmission electron microscopy (TEM) to speculate on the interface formation mechanism of the composites. TEM specimens were prepared from the layered composite samples by polishing, dimpling, and ion-beam thinning to achieve electron transparency around the interfaces. No interface layer was found for the Y2SiO5/RBSiC composites.

引用

页码：121 / 124

页数：4

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