Optical properties of δ-Bi2O3 thin films grown by reactive sputtering -: art. no. 231916

被引:120
作者
Fan, HT [1 ]
Teng, XM [1 ]
Pan, SS [1 ]
Ye, C [1 ]
Li, GH [1 ]
Zhang, LD [1 ]
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanotechnol, Key Lab Mat Phys, Hefei 230031, Peoples R China
关键词
D O I
10.1063/1.2136351
中图分类号
O59 [应用物理学];
学科分类号
摘要
The optical properties of delta-Bi2O3 thin films were investigated using spectroscopic ellipsometry and optical absorption spectrum. delta-Bi2O3 thin films were grown on Si and quartz substrates under different oxygen flow ratios (OFR) by radio frequency reactive magnetron sputtering. The Tauc-Lorentz dispersion method was adopted to model the optical dispersion functions of the thin films. The optical bandgap was obtained by three different methods. It was found that refractive index and extinction coefficient decrease, and the optical bandgap has a slight blue shift with increasing the OFR. Factors influencing the optical constants and optical bandgap are discussed. (c) 2005 Americian Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
相关论文
共 27 条
[1]   PHOTOELECTRICAL PROPERTIES OF delta -Bi2O3 THIN FILMS. [J].
Agasiev, A.A. ;
Zeinally, A.Kh. ;
Alekperov, S.J. ;
Guseinov, Ya.Yu. .
Materials Research Bulletin, 1986, 21 (07) :765-771
[2]   Photoprotective zinc oxide coatings on polyethylene terephthalate films [J].
Bachari, EM ;
Ben Amor, S ;
Baud, G ;
Jacquet, M .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 79 (02) :165-174
[4]   Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties [J].
Cho, YJ ;
Nguyen, NV ;
Richter, CA ;
Ehrstein, JR ;
Lee, BH ;
Lee, JC .
APPLIED PHYSICS LETTERS, 2002, 80 (07) :1249-1251
[5]   Powder X-ray diffraction data for the new polymorphic compound omega-Bi2O3 [J].
Gualtieri, AF ;
Immovilli, S ;
Prudenziati, M .
POWDER DIFFRACTION, 1997, 12 (02) :90-92
[6]   Spectroscopic ellipsometry characterization of nitrogen-incorporated HfO2 gate dielectrics grown by radio-frequency reactive sputtering -: art. no. 232901 [J].
He, G ;
Zhang, LD ;
Li, GH ;
Liu, M ;
Zhu, LQ ;
Pan, SS .
APPLIED PHYSICS LETTERS, 2005, 86 (23) :1-3
[7]  
Higaki K, 1998, ELECTROCHEM SOLID ST, V1, P107, DOI 10.1149/1.1390653
[8]   Dielectric functions of ferroelectric Bi3.25La0.75Ti3O12 thin films on Si(100) substrates [J].
Hu, ZG ;
Ma, JH ;
Huang, ZM ;
Wu, YN ;
Wang, GS ;
Chu, JH .
APPLIED PHYSICS LETTERS, 2003, 83 (18) :3686-3688
[9]   Parameterization of the optical functions of amorphous materials in the interband region (vol 69, pg 371, 1996) [J].
Jellison, GE ;
Modine, FA .
APPLIED PHYSICS LETTERS, 1996, 69 (14) :2137-2137
[10]   Growth of bismuth oxide films by direct liquid injection-metal organic chemical vapor deposition with Bi(tmhd)3 (tmhd: 2,2,6,6-tetramethyl-3,5-heptanedione) [J].
Kang, SW ;
Rhee, SW .
THIN SOLID FILMS, 2004, 468 (1-2) :79-83