Organic field effect transistor mobility from transient response analysis

被引：38

作者：

Dunn, L ^{[1
]}

Basu, D ^{[1
]}

Wang, L ^{[1
]}

Dodabalapur, A ^{[1
]}

机构：

[1] Univ Texas, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2172023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An electronic method for analyzing the transient response of a pentacene organic field effect transistor at time scales below 100 ns is presented with analysis that allows extraction of estimated field-dependent device mobility from the measured carrier velocity. A second technique we propose is the use of T-SPICE simulations of transient response data of the device behavior between similar to 100 ns and similar to 3 mu s. These results are compared with lower field-effect mobilities extracted from the transient data at 250 mu s and the dc drain current (I-d) versus source-drain voltage (V-ds) characteristics in the saturation regime. This trend of decreasing mobility with increasing time is perhaps due to the absence of the bias stress effect at small time scales.

引用

页数：3

共 15 条

[1] Organic photovoltaics: technology and market [J].