Assessment of GaN metal-semiconductor-metal photodiodes for high-energy ultraviolet photodetection

被引：80

作者：

Monroy, E

Palacios, T

Hainaut, O

Omnès, F

Calle, F

Hochedez, JF

机构：

[1] CEA Grenoble, PSC SP2M, Dept Rech Fondamentale Matiere Condensee, F-38054 Grenoble 9, France

[2] Univ Politecn Madrid, Dept Ingn Elect, E-28040 Madrid, Spain

[3] Univ Paris 11, Inst Astrophys Spatiale, F-91405 Orsay, France

[4] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France

[5] Royal Observ Belgium, Solar Phys Dept, B-1180 Brussels, Belgium

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 17期

关键词：

D O I：

10.1063/1.1475362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication and characterization of low dark-current GaN metal-semiconductor-metal (MSM) photodiodes. Their quantum efficiency in the vacuum-ultraviolet range has been analyzed, demonstrating that these devices are an excellent choice for high-energy photodetection. Models to explain and control the performance as a function of residual doping and geometry are applied to GaN-based MSM photodiodes. (C) 2002 American Institute of Physics.

引用

页码：3198 / 3200

页数：3

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