Large magnetoresistance effect due to spin injection into a nonmagnetic semiconductor

被引：82

作者：

Schmidt, G ^{[1
]}

Richter, G ^{[1
]}

Grabs, P ^{[1
]}

Gould, C ^{[1
]}

Ferrand, D ^{[1
]}

Molenkamp, LW ^{[1
]}

机构：

[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.87.227203

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a nonmagnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the nonmagnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the nonmagnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.

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收藏

页码：227203 / 227203

页数：4

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