Self-organization phenomenon of strained InGaAs on InP (311) substrates grown by metalorganic vapor phase epitaxy

被引：7

作者：

Temmyo, J ^{[1
]}

Kozen, A ^{[1
]}

Tamamura, T ^{[1
]}

Notzel, R ^{[1
]}

Fukui, T ^{[1
]}

Hasegawa, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV, RES CTR INTERFACE QUANTUM ELECTR, SAPPORO, HOKKAIDO 060, JAPAN

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 03期

关键词：

InGaAs; InP (311) substrates; metalorganic vapor phase epitaxy (MOVPE); self-organization;

D O I：

10.1007/BF02666616

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated that a self-organization phenomenon occurs in strained InGaAs system on InP (311) substrates grown by metalorganic vapor phase epitaxy. This suggests that a similar formation process of nanocrystals exists not only on the GaAs (311)B substrate but also on the InP (311)B substrate. However, the ordering and the size homogeneity of the self-organized nanocrystals are slightly worse than those of the InGaAs/AIGaAs system on the GaAs (311)B substrate. The tensilely strained condition of a InGaAs/InP system with growth interruption in a PH3 atmosphere reveals a surface morphology with nanocrystals even on the InP (100) substrate. It was found that strain energy and high growth temperature are important factors for self-organization on III-V compound semiconductors. Preliminary results indicate that the self-organized nanostructures in strained InGaAs/InP systems on InP substrates exhibit room temperature photoluminescent emissions at a wavelength of around 1.3 mu m.

引用

页码：431 / 437

页数：7

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