A (2√3x2√13) surface phase in the 6H-SiC(0001) surface studied by scanning tunneling microscopy

被引：50

作者：

Naitoh, M ^{[1
]}

Takami, J ^{[1
]}

Nishigaki, S ^{[1
]}

Toyama, N ^{[1
]}

机构：

[1] Kyushu Inst Technol, Dept Elect Engn, Kitakyushu, Fukuoka 8048550, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 05期

关键词：

D O I：

10.1063/1.124470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structure of Si-rich 6H-SiC(0001) surfaces has been investigated by scanning tunneling microscopy (STM) and low-energy electron diffraction. We observed a surface phase with [GRAPHICS] periodicity (designated as (2 root 3X2 root 13) for convenience), coexisting with the known stable (3 X3) phase, in a surface obtained by annealing the (3X3) surface at 800 degrees C. A structural model containing eight Si adatoms per unit cell on the Si adlayer is proposed, which is consistent with the present STM images and with the extension of the (3X3) model structure. (C) 1999 American Institute of Physics. [S0003-6951(99)03731-6].

引用

页码：650 / 652

页数：3

共 6 条

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