Quantum rings formed in InAs QDs annealing process

被引：6

作者：

Jia, Guo-zhi ^{[1
]}

Yao, Jiang-hong ^{[2
]}

Shu, Yong-chun ^{[2
]}

Xing, Xiao-dong ^{[2
]}

Pi, Biao ^{[2
]}

机构：

[1] Tianjin Inst Urban Construct, Dept Fundamental Subject, Tianjin 300384, Peoples R China

[2] Nankai Univ, TEDA Appl Phys Sch, Minist Educ, Key Lab Adv Tech & Fabricat Weak Light Nonlinear, Tianjin 300475, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 08期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

Quantum rings; Molecular beam epitaxy; Annealing; Atomic force microscopy; DOTS;

D O I：

10.1016/j.apsusc.2008.11.042

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

InAs quantum dots (QDs) were grown by molecular beam epitaxy in the Stranski-Krastanow growth mode. The samples were placed between two undoped GaAs slices and annealed in nitrogen ambient at different temperature. Effect of annealing temperature on the evolution of QDs morphology is investigated by the AFM. This behavior can be attributed to the mechanisms of QDs ripening, intermixing and segregation in the annealing process. A number of QDs have evoluted into the uniform distribution quantum rings (QRs) when the sample was annealed at the temperature of 800 degrees C. The results indicated that high density and uniform QRs can be obtained by the post-growth technique. Crown Copyright (C) 2008 Published by Elsevier B. V. All rights reserved.

引用

页码：4452 / 4455

页数：4

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