Electronic structure of boron nitride cone-shaped nanostructures

被引：21

作者：

Zhi, CY ^{[1
]}

Bando, Y ^{[1
]}

Tang, CC ^{[1
]}

Golberg, D ^{[1
]}

机构：

[1] NIMS, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.72.245419

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron nitride nanohorns (BNNHs) were synthesized in a large-scale. Detailed transmission electron microscopy investigations reveal that a BNNH consists of boron nitride cone-shaped nanostructures (BNCNSs) with different disclination angles. Systematic studies of electronic structure of a BNCNS with different disclination angles and different defects were performed by first-principles calculations. The results imply that the electronic structure of a BNCNS weakly depends on the disclination angles; by contrast, it is strongly influenced by the types of line-bond defects (B-B or N-N bonds). Importantly, our calculations show that a BNNH can be the junction made of semiconducting nanostructures with various energy gaps.

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页数：5

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