The study of martensitic transformation and nanoscale surface relief in zirconia

被引：13

作者：

Chen, XY ^{[1
]}

Zheng, XH

Fang, HS

Shi, HZ

Wang, XF

Chen, HM

机构：

[1] Tsing Hua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

[2] Beijing Inst Technol, Dept Mat Sci & Engn, Beijing 100081, Peoples R China

[3] Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2002年 / 21卷 / 05期

关键词：

D O I：

10.1023/A:1014936007488

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, atomic force microscopy (AFM) was used for the first time to quantitatively measure the size of nanoscale relief of CeO2-ZrO2. The results indicate that the transformation of tetragonal (t) to monoclinic (m) in CeO2-ZrO2 has characteristics of surface relief mode, and corresponds with the mechanism of the invariant plane strain (IPS) type mechanism.

引用

页码：415 / 418

页数：4

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