Compressibility and thermal expansion of cubic silicon nitride -: art. no. 161202

被引:99
作者
Jiang, JZ
Lindelov, H
Gerward, L
Ståhl, K
Recio, JM
Mori-Sanchez, P
Carlson, S
Mezouar, M
Dooryhee, E
Fitch, A
Frost, DJ
机构
[1] Tech Univ Denmark, Dept Phys, DK-2800 Lyngby, Denmark
[2] Tech Univ Denmark, Dept Chem, DK-2800 Lyngby, Denmark
[3] Univ Oviedo, Fac Quim, Dept Quim Fis & Analit, E-33006 Oviedo, Spain
[4] European Synchrotron Radiat Facil, F-38000 Grenoble, France
[5] Univ Bayreuth, Bayer Geoinst, D-95440 Bayreuth, Germany
关键词
D O I
10.1103/PhysRevB.65.161202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The compressibility and thermal expansion of the cubic silicon nitride (c-Si3N4) phase have been investigated by performing in situ x-ray powder-diffraction measurements using synchrotron radiation, complemented with computer simulations by means of first-principles calculations. The bulk compressibility of the c-Si3N4 phase originates from the average of both Si-N tetrahedral and octahedral compressibilities where the octahedral polyhedra are less compressible than the tetrahedral ones. The origin of the unit cell expansion is revealed to be due to the increase of the octahedral Si-N and N-N bond lengths with temperature, while the lengths for the tetrahedral Si-N and N-N bonds remain almost unchanged in the temperature range 295-1075 K.
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页码:1 / 4
页数:4
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