Dependence of field-effect mobility and contact resistance on nanostructure in regioregular poly(3-hexylthiophene) thin film transistors

被引：31

作者：

Singh, K. A. ^{[1
]}

Sauve, G. ^{[2
]}

Zhang, R. ^{[2
]}

Kowalewski, T. ^{[2
]}

McCullough, R. D. ^{[2
]}

Porter, L. M. ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[2] Carnegie Mellon Univ, Dept Chem, Pittsburgh, PA 15213 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 26期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2955515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mobility and contact resistance of transistors based on regioregular poly(3-hexylthiophene) (P3HT) with Ti/Pt electrodes were investigated as a function of the molecular weight (M-W) of P3HT. For an increase in M-W from 5.5 to 11 kDa, the mobility increased from 0.04 to 0.16 cm(2) V-1 s(-1), whereas the contact resistance decreased from 1.7 to 0.6 M Omega. Further increases in M-W yielded an apparent saturation in both the mobility and the contact resistance. A nanofibrilar morphology was observed where the width of the nanofibrils increases with M-W. A qualitative model based on polymer chain folding is proposed to explain the electrical results. (c) 2008 American Institute of Physics.

引用

页数：3

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