High temperature transport properties at metal/SrTiO3 interfaces

被引：20

作者：

Kawada, T ^{[1
]}

Iizawa, N ^{[1
]}

Tomida, M ^{[1
]}

Kaimai, A ^{[1
]}

Kawamura, K ^{[1
]}

Nigara, Y ^{[1
]}

Mizusaki, J ^{[1
]}

机构：

[1] Tohoku Univ, Sci Measurements Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 1999年 / 19卷 / 6-7期

关键词：

SrTiO3; interfaces; electrical properties;

D O I：

10.1016/S0955-2219(98)00297-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High temperature current-voltage characteristics were investigated with a Nb doped SrTiO3 (NbSTO) single crystal. The conductivity of the 0.5 wt% Nb doped SrTiO3 showed high n-type conductivity with a negative temperature coefficient. The Pt/Nb-STO interface freshly, prepared by laser ablation at 973 K in high vacuum condition showed ohmic behavior. However, it turned to show a Schottky type non linearity when annealed in oxygen gas at temperatures higher than 773 K The I-V curve in the forward direction was well,fitted with the equation based on the thermionic emission model. At high temperatures, the I-V behavior was dependent on the oxygen partial pressure. The lower oxygen partial pressure resulted in a lower barrier height. The change in the I-V curve with oxygen potential was almost reversible at 873 K, and was frozen below 673 K. Those phenomena suggested that the Schottky barrier formation at the Pt/STO interface has a strong relation with the oxygen transport in Nb-STO. (C) 1999 Elsevier Science Limited. All rights reserved.

引用

页码：687 / 691

页数：5

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