Observation of growth modes during metal-organic chemical vapor deposition of GaN

被引：55

作者：

Stephenson, GB

Eastman, JA

Thompson, C

Auciello, O

Thompson, LJ

Munkholm, A

Fini, P

DenBaars, SP

Speck, JS

机构：

[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[2] Argonne Natl Lab, Div Chem, Argonne, IL 60439 USA

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 22期

关键词：

D O I：

10.1063/1.123333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present real-time surface x-ray scattering measurements during homoepitaxial growth of GaN by metal-organic chemical vapor deposition. We observed intensity oscillations corresponding to the completion of each monolayer during layer-by-layer growth. The growth rate was found to be temperature independent and Ga-transport limited. Transitions between step-flow, layer-by-layer, and three-dimensional growth modes were determined as a function of temperature and growth rate. (C) 1999 American Institute of Physics. [S0003-6951(99)01622-8].

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页码：3326 / 3328

页数：3

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