JVD silicon nitride as tunnel dielectric in p-channel flash memory

被引：20

作者：

She, M ^{[1
]}

King, TJ

Hu, CM

Zhu, WJ

Luo, ZJ

Han, JP

Ma, TP

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Yale Univ, Ctr Microelect Mat & Struct, New Haven, CT 06520 USA

[3] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 02期

基金：

美国国家科学基金会;

关键词：

charge injection; semiconductor memories; silicon nitride;

D O I：

10.1109/55.981316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality jet vapor deposition nitride is investigated as a tunnel dielectric for flash memory device application. Compared to control devices with SiO2 tunnel dielectric, faster programming speed as well as better retention time are achieved with low programming voltage. The p-channel devices can be programmed by hot electrons and erased by hot holes, or vice versa. Multilevel programming capability is shown.

引用

页码：91 / 93

页数：3

共 4 条

[1]

Cappelletti P., 1999, FLASH MEMORIES, VFirst

[2]

LIN RL, 1998, 5 INT C SOL STAT INT, P457

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Ohnakado, T ;

Onoda, H ;

Sakamoto, O ;

Hayashi, K ;

Nishioka, N ;

Takada, H ;

Sugahara, K ;

Ajika, N ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (09) :1866-1871

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