Patterned growth of single-walled carbon nanotubes on full 4-inch wafers

被引:174
作者
Franklin, NR [1 ]
Li, YM [1 ]
Chen, RJ [1 ]
Javey, A [1 ]
Dai, HJ [1 ]
机构
[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
关键词
D O I
10.1063/1.1429294
中图分类号
O59 [应用物理学];
学科分类号
摘要
Patterned growth of single-walled carbon nanotubes (SWNTs) is achieved on full 4-in. SiO2/Si wafers. Catalytic islands with high uniformity over the entire wafer are obtained by a deep ultraviolet photolithography technique. Growth by chemical vapor deposition of methane is found to be very sensitive to the amount of H-2 co-flow. Understanding of the chemistry enables the growth of high quality SWNTs from massive arrays (10(7)-10(8)) of well-defined surface sites. The scale up in patterned nanotube growth shall pave the way to large-scale molecular wire devices. (C) 2001 American Institute of Physics.
引用
收藏
页码:4571 / 4573
页数:3
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