Interface structure of epitaxial graphene grown on 4H-SiC(0001)

被引：89

作者：

Hass, J. ^{[1
]}

Millan-Otoya, J. E. ^{[1
]}

First, P. N. ^{[1
]}

Conrad, E. H. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 20期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.78.205424

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first graphene sheet is an extended layer that is more than twice the thickness of a bulk SiC bilayer (similar to 1.7 A compared to 0.63 A). The distance from this interface layer to the first graphene sheet is much smaller than the graphite interlayer spacing but larger than the same distance measured for graphene grown on the (0001) surface, as predicted previously by ab initio calculations.

引用

页数：10

共 64 条

[1]

[Anonymous], 1991, HDB SYNCHROTRON RAD

[2] LATTICE CONSTANTS OF GRAPHITE AT LOW TEMPERATURES [J].

BASKIN, Y ;

MEYER, L .

PHYSICAL REVIEW, 1955, 100 (02) :544-544

[3] High-precision determination of atomic positions in crystals: The case of 6H- and 4H-SiC [J].

Bauer, A ;

Krausslich, J ;

Dressler, L ;

Kuschnerus, P ;

Wolf, J ;

Goetz, K ;

Kackell, P ;

Furthmuller, J ;

Bechstedt, F .

PHYSICAL REVIEW B, 1998, 57 (05) :2647-2650

[4] Structure refinement of the silicon carbide polytypes 4H and 6H:: unambiguous determination of the refinement parameters [J].

Bauer, A ;

Reischauer, P ;

Kräusslich, J ;

Schell, N ;

Matz, W ;

Goetz, K .

ACTA CRYSTALLOGRAPHICA SECTION A, 2001, 57 :60-67

[5] Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].

Berger, C ;

Song, ZM ;

Li, TB ;

Li, XB ;

Ogbazghi, AY ;

Feng, R ;

Dai, ZT ;

Marchenkov, AN ;

Conrad, EH ;

First, PN ;

de Heer, WA .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916

[6] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[7] Quasiparticle dynamics in graphene [J].

Bostwick, Aaron ;

Ohta, Taisuke ;

Seyller, Thomas ;

Horn, Karsten ;

Rotenberg, Eli .

NATURE PHYSICS, 2007, 3 (01) :36-40

[8] Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC [J].

Brar, Victor W. ;

Zhang, Yuanbo ;

Yayon, Yossi ;

Ohta, Taisuke ;

McChesney, Jessica L. ;

Bostwick, Aaron ;

Rotenberg, Eli ;

Horn, Karsten ;

Crommie, Michael F. .

APPLIED PHYSICS LETTERS, 2007, 91 (12)

[9]

BURDETT JK, 1995, CHEM BONDING SOLIDS, P152

[10] SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY OF CUBIC BETA-SIC(111) SURFACES [J].

CHANG, CS ;

TSONG, IST ;

WANG, YC ;

DAVIS, RF .

SURFACE SCIENCE, 1991, 256 (03) :354-360

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