Enhanced ferroelectric properties of Cr-doped BiFeO3 thin films grown by chemical solution deposition

被引：219

作者：

Kim, JK ^{[1
]}

Kim, SS

Kim, WJ

Bhalla, AS

Guo, R

机构：

[1] Changwon Natl Univ, Dept Phys, Chang Won 641773, Kyungnam, South Korea

[2] Penn State Univ, Mat Res Lab 187, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2189453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multiferroic Cr-doped BiFeO3 (BFO) thin films were prepared on Pt/TiO2/SiO2/Si(100) substrates by a chemical solution deposition method. From the x-ray photoelectron spectroscopy measurements, it was observed that the valence number of Fe ion in undoped and Cr-doped BFO thin films was found to be almost 3+. It was found that Cr-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage-current density and P-E hysteresis characteristics. The 3 mol % Cr-doped BFO thin film showed a leakage-current density of 9.2x10(-7) A/cm(2) at 100 kV/cm and a large remanent polarization (P-r) of 61 mu C/cm(2) at room temperature. (c) 2006 American Institute of Physics.

引用

页数：3

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