Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures

被引:163
作者
Pemasiri, Kuranananda [1 ]
Montazeri, Mohammad [1 ]
Gass, Richard [1 ]
Smith, Leigh M. [1 ]
Jackson, Howard E. [1 ]
Yarrison-Rice, Jan [2 ]
Paiman, Suriati [3 ]
Gao, Qiang [3 ]
Tan, H. Hoe [3 ]
Jagadish, Chennupati [3 ]
Zhang, Xin [4 ,5 ]
Zou, Jin [4 ,5 ]
机构
[1] Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA
[2] Miami Univ, Dept Phys, Oxford, OH 45056 USA
[3] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[4] Univ Queensland, Sch Engn, Brisbane, Qld 4072, Australia
[5] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia
基金
美国国家科学基金会;
关键词
D O I
10.1021/nl802997p
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We use time-resolved photoluminescence from single InP nanowires containing both wurtzite (WZ) and zincblende (ZB) crystalline phases to measure the carrier dynamics of quantum confined excitons in a type-II homostructure. The observed recombination lifetime increases by nearly 2 orders of magnitude from 170 ps for excitons above the conduction and valence band barriers to more than 8400 ps for electrons and holes that are strongly confined in quantum wells defined by monolayer-scale ZB sections in a predominantly WZ nanowire. A simple computational model, guided by detailed high-resolution transmission electron microscopy measurements from a single nanowire, demonstrates that the dynamics are consistent with the calculated distribution of confined states for the electrons and holes.
引用
收藏
页码:648 / 654
页数:7
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