Passivate SiNx halftone phase shifting mask for deep ultraviolet exposure

被引：3

作者：

Ito, S ^{[1
]}

Iwamatsu, T ^{[1
]}

Sato, H ^{[1
]}

Asano, M ^{[1
]}

Kawano, K ^{[1
]}

Miyashita, F ^{[1
]}

机构：

[1] TOSHIBA CO LTD,DEPT INTEGRATED CIRCUIT ADV PROC ENGN,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 06期

关键词：

D O I：

10.1116/1.588620

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Halftone phase shift masks with a single-layer SiNx absorption film whose stoichiometric ratio x was controlled were developed at 365 and 248 nm, respectively. Because this stoichiometric ratio x was smaller than 1.33 (Si3N4), the SiNx halftone films were unstable, especially during 248 nm exposure, causing a transmittance error. In this article, we show how to get stable SiN, film for 248 nm exposure. (C) 1996 American Vacuum Society.

引用

页码：4199 / 4202

页数：4

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[8]

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