A distributed charge storage with GeO2 nanodots

被引：43

作者：

Chang, TC ^{[1
]}

Yan, ST

Hsu, CH

Tang, MT

Lee, JF

Tai, YH

Liu, PT

Sze, SM

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan

[2] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung 80424, Taiwan

[3] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[4] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan

[5] Natl Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan

[6] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

[7] Natl Nano Device Lab, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期

关键词：

D O I：

10.1063/1.1697627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3x10(11) cm(-2), respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to similar to0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots. (C) 2004 American Institute of Physics.

引用

页码：2581 / 2583

页数：3

共 16 条

[1] Local order of Sb and Bi dopants in hydrogenated amorphous germanium thin films studied by extended x-ray absorption fine structure
Dalba, G
Fornasini, P
Grisenti, R
Rocca, F
Chambouleyron, I
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (04) : 625 - 627
[2] Nanocrystal nonvolatile memory devices
De Blauwe, J
[J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2002, 1 (01) : 72 - 77
[3] EUGENE J, 1991, APPL PHYS LETT, V59, P78, DOI 10.1063/1.105528
[4] Ha SY, 1999, ELECTROCHEM SOLID ST, V2, P461, DOI 10.1149/1.1390871
[5] A FLOATING GATE AND ITS APPLICATION TO MEMORY DEVICES
KAHNG, D
SZE, SM
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1288 - +
[6] MOS memory using germanium nanocrystals formed by thermal oxidation of Si1-xGex
King, YC
King, TJ
Hu, CM
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 115 - 118
[7] Charging effects in silicon nanocrystals within SiO2 layers, fabricated by chemical vapor deposition, oxidation, and annealing
Kouvatsos, DN
Ioannou-Sougleridis, V
Nassiopoulou, AG
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (03) : 397 - 399
[8] OXIDATION STUDIES OF SIGE
LEGOUES, FK
ROSENBERG, R
NGUYEN, T
HIMPSEL, F
MEYERSON, BS
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) : 1724 - 1728
[9] MAES HE, 1987, P 17 EUR SOL STAT DE, P157
[10] Ostwald W, 1900, Z PHYS CHEM-STOCH VE, V34, P495

← 1 2 →