Control over the crystalline state of sapphire

被引：160

作者：

Juodkazis, Saulius

Nishimura, Koichi

Misawa, Hiroaki

Ebisui, Takahiro

Waki, Ryoichi

Matsuo, Shigeki

Okada, Tatsuya

机构：

[1] Hokkaido Univ, CREST JST, Kita Ku, Sapporo, Hokkaido 0010021, Japan

[2] Hokkaido Univ, Res Inst Elect Sci, Kita Ku, Sapporo, Hokkaido 0010021, Japan

[3] Univ Tokushima, Dept Ecosyst Engn, Tokushima 7708506, Japan

[4] Univ Tokushima, Dept Mech Engn, Tokushima 7708506, Japan

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 11期

关键词：

D O I：

10.1002/adma.200501837

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Amorphous regions in sapphire with sub-micrometer 3D resolution have been produced at the focus of a single femtosecond laser pulse. Crystalline-to-amorphous and amorphous-to-polycrystalline transitions (crystalline and amorphous regions are marked C and A in the HRTEM image) are induced by single- and multi-pulse irradiation, respectively. The wet-etching selectivity for the amorphous phase is significantly greater than that for the crystalline phase in aqueous HF.

引用

页码：1361 / +

页数：5

共 19 条

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