Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors

被引:267
作者
Knap, W [1 ]
Deng, Y
Rumyantsev, S
Shur, MS
机构
[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[3] Univ Montpellier, GES, CNRS, F-34900 Montpellier, France
[4] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia
关键词
D O I
10.1063/1.1525851
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the experiments on resonant photoresponse of the gated two-dimensional electron gas to the terahertz radiation. The visible-light-induced, metastable increase of the carrier density in the transistor channel shifts the resonance position to the higher gate voltages, in agreement with plasma wave detection theory. In this way, an unambiguous proof of the origin of the observed resonant detection is provided. The visible light illumination also leads to an increase of the electron mobility and, as a result, to an increase of the resonant detection quality factor. Resonant detection of the harmonics of the Gunn diode-based emission system is demonstrated up to 1.2 THz. (C) 2002 American Institute of Physics.
引用
收藏
页码:4637 / 4639
页数:3
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