Bandstructure modulation for carbon nanotubes in a uniform electric field

被引:110
作者
O'Keeffe, J [1 ]
Wei, CY
Cho, KJ
机构
[1] NASA, Ames Res Ctr, Moffett Field, CA 94305 USA
[2] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
关键词
D O I
10.1063/1.1432441
中图分类号
O59 [应用物理学];
学科分类号
摘要
A method to electronically modulate the energy gap and bandstructure of semiconducting carbon nanotubes is proposed. We investigate this bandstructure modulation mechanism using tight-binding and density functional theory (DFT). Results show that the energy gap of a semiconducting nanotube can be narrowed, when the tube is placed in an electric field perpendicular to the tube axis. In contrast, Metallic tubes were found to exhibit a screening behavior, whereby free charge redistributes about the tube circumference as a result of the external field. In this case, the bandstructure shows little perturbation in response to an applied electric field. (C) 2002 American Institute of Physics.
引用
收藏
页码:676 / 678
页数:3
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