Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications

被引：10

作者：

Chang, K. ^{[1
]}

Shanmugasundaram, K.

Shallenberger, J.

Ruzyllo, J.

机构：

[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

[2] Penn State Univ, Mat Characterizat Lab, University Pk, PA 16802 USA

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 7-8期

关键词：

hafnium; dielectrics; deposition process; metal-oxide-semiconductor (MOS) structure;

D O I：

10.1016/j.tsf.2006.09.048

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of hafnium, content on material properties of ultra-thin, mist deposited Hf-based dielectrics is investigated. Deposition rate and dielectric constant of HfSiOx film were found to increase with Hf content in the precursor. X-ray photoelectron spectroscopy and X-ray diffractometry revealed the presence of distinct Hf-O and Hf Si-O phases in the HfSiOx film deposited with high-Hf content precursor. With an increase of Hf-content in the HfSiOx the equivalent oxide thickness value of the Pt-HfSiOx-Si gate stack was decreasing and leakage current maintained lower than that of HfO2 at the similar physical thickness. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：3802 / 3805

页数：4

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