Estimation of the thermal band gap of a semiconductor from Seebeck measurements

被引：738

作者：

Goldsmid, HJ ^{[1
]}

Sharp, JW ^{[1
]}

机构：

[1] Marlow Ind Inc, Dallas, TX USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 07期

关键词：

Seebeck; band gap; thermopower; energy gap; intrinsic semiconductor;

D O I：

10.1007/s11664-999-0211-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that the magnitude of the Seebeck coefficient of a semiconductor has a maximum value that is close to one-half the energy gap divided by eT. An expression for the position of the Fermi level at which the Seebeck coefficient has a maximum or minimum value is derived, with account taken of the mobility and effective mass ratios. It is concluded that measurement of the Seebeck coefficient as a function of temperature on any novel semiconductor is one of the simplest ways of estimating its band gap.

引用

页码：869 / 872

页数：4