Strongly anisotropic electronic transport at Landau level filling factor ν=9/2 and ν=5/2 under a tilted magnetic field

被引:203
作者
Pan, W [1 ]
Du, RR
Stormer, HL
Tsui, DC
Pfeiffer, LN
Baldwin, KW
West, KW
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] NHMFL, Tallahassee, FL USA
[3] Univ Utah, Dept Phys, Salt Lake City, UT USA
[4] Columbia Univ, Dept Phys, New York, NY USA
[5] Columbia Univ, Dept Appl Phys, New York, NY 10027 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.83.820
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have investigated the influence of an increasing in-plane magnetic field on the states of half filling of Landau levels (v = 11/2, 9/2, 7/2, and 5/2) of a two-dimensional electron system. In the electrically anisotropic phase at v = 9/2 and 11/2 an in-plane magnetic field of similar to 1-2 T overcomes its initial pinning to the crystal lattice and reorients this phase. In the initially isotropic phases at v = 5/2 and 7/2 an in-plane magnetic field induces a strong electrical anisotropy. In all cases, for high in-plane fields the high-resistance axis is parallel to the direction of the in-plane field.
引用
收藏
页码:820 / 823
页数:4
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