Schottky contact and thermal stability of Ni on n-type GaN - Comment

被引：5

作者：

Duxstad, KJ

Haller, EE

机构：

[1] University of California at Berkeley, Lawrence Berkeley Natl. Laboratory, Berkeley

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 01期

关键词：

D O I：

10.1063/1.365845

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

J. D. Guo et al. [J. Appl. Phys. 80, 1623 (1996)] have studied the thermal stability of Ni on GaN and have deduced by x-ray diffraction measurements that new phases form at the interface between Ni and GaN. This determination, based solely on x-ray diffraction data, is ambiguous, as the peaks assigned to the Ga4Ni3 and Ni-N phases can also be attributed to substrate related x-ray peaks. (C) 1997 American Institute of Physics.

引用

页码：491 / 492

页数：2