Nonuniversality in mound formation during semiconductor growth

被引：22

作者：

Lengel, G ^{[1
]}

Phaneuf, RJ

Williams, ED

Das Sarma, S

Beard, W

Johnson, FG

机构：

[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

[2] Lab Phys Sci, College Pk, MD 20740 USA

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.60.R8469

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of epitaxial GaAs(100) and InP(100) via molecular beam epitaxy has been characterized in vacuo using scanning tunneling microscopy and a height-height correlation analysis of the resulting images. The GaAs growth characteristics can be changed from a layered to a mounded morphology via a change in the As:Ga flux ratio. For InP growth, mounding is observed for growth on a nominally flat substrate, but layered growth occurs on a vicinal substrate. For both the GaAs and InP cases, the measured growth exponents are different for layered vs mounded growth, and do not conform to the predictions of existing dynamical scaling theories.

引用

页码：R8469 / R8472

页数：4

共 31 条

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