NMR analysis of chemically amplified resist films

被引:26
作者
Ito, H [1 ]
Sherwood, M [1 ]
机构
[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA
来源
MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2 | 1999年 / 3678卷
关键词
nuclear magnetic resonance spectroscopy; chemical amplification; acid-catalyzed deprotection; photochemical acid generators; protected polyhydroxystyrene; hydroxystyrene copolymers; casting solvents;
D O I
10.1117/12.350176
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Carbon-13 nuclear magnetic resonance (NMR) spectroscopy has been employed in the investigation of ESCAP-related deep UV resist films. The films were first processed (baked and/or exposed) and then dissolved in a deuterated solvent. Quantitative data were obtained on the concentration of residual casting solvents as a function of the bake temperature and of storage conditions. In addition to accurate determination of the degree of deprotection, side reactions that occur in the resist film such as C- and O-alkylation of the phenol have been quantitatively analyzed while varying the exposure dose, bake temperature, resin structure, and acid generator. Furthermore, photochemical decomposition of several acid generators in the resist film was quantitatively monitored. This paper demonstrates that the C-13 NMR technique can readily provide a wealth of quantitative and indispensable information about constituents and chemistries id resist films.
引用
收藏
页码:104 / 115
页数:12
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