A highly absorbing ARC for DUV lithography

被引：12

作者：

Pavelchek, EK

Meador, JD

Guerrero, DJ

Lamb, JE

Kache, A

doCanto, M

Adams, TG

Stark, D

Miller, D

机构：

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIII | 1996年 / 2724卷

关键词：

D O I：

10.1117/12.241867

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The properties of a new anti-reflective coating for 248nm lithography are described. It is formed by thermally cross-linking a spin-on organic coating, and has an absorbance >12/mu m. It is compatible with UVIIHS and APEX-E photoresists. Thin films (<600 Angstrom over silicon substrates) are found to completely suppress standing waves, to reduce EO swing curves to less than 3%, and to offer good CD control over typical field oxide topography. The etch rate was found to be comparable to that of the APEX-E photoresist.

引用

页码：692 / 699

页数：8