Photoelectrochemical characteristics of α-Fe2O3 nanocrystalline semiconductor thin film

alpha-Fe2O3 single crystal thin films have been prepared from 45 nm diameter colloid. These thin nanocrystalline films exhibit a typical behavior of n-type semiconductor material because of the anodic photocurrent generation. The anodic photocurrent response upon illumination and the reversal spike of cathodic current upon the light switched off suggests that the electrons can flow in both directions and no space charge layer exists at the thin film/electrolyte interface. The decreased photocurrent responses of thicker films can be explained by the electric resistance effect and recombination effect. Moreover, the thicker film will lead to a poor photocurrent response for short wavelength light. Considering the use of sunlight, the thin film thickness should be controlled to an optimal value.