CMOS-compatible organic light-emitting diodes

被引:30
作者
Heinrich, LMH
Muller, J
Hilleringmann, U
Goser, KF
Holmes, A
Hwang, DH
Stern, R
机构
[1] UNIV CAMBRIDGE,CAMBRIDGE CB2 1EW,ENGLAND
[2] HOECHST AG,D-65926 FRANKFURT,GERMANY
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1109/16.605463
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report a new interesting method for the integration of light-emitting devices on silicon substrate. As an active layer, we use unsubstituted PPV or PPV-based organic macromolecules with a p(+)-silicon anode and a cathode made from aluminum or titanium. The polymer is deposited by spin-coating the precursor, followed by a thermal conversion step to form the macromolecules. All process steps, including the possibility of dry etching of the active layer and the upper electrode, are typical for MOS technology. Spectrum analysis, current-voltage, and intensity measurements have been carried out for device characterization. These organic light-emitting diodes (OLED's) allow the monolithic integration of microelectronic circuits and light-emitting devices on one silicon chip applying only MOS typical process steps.
引用
收藏
页码:1249 / 1252
页数:4
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