Electrochemical performance of amorphous-silicon thin films for lithium rechargeable batteries
被引:96
作者:
Moon, T
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Sch Mat Sci & Engn, Res Ctr Energy Convers & Storage, Seoul 151744, South KoreaSeoul Natl Univ, Sch Mat Sci & Engn, Res Ctr Energy Convers & Storage, Seoul 151744, South Korea
Moon, T
[1
]
Kim, C
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Sch Mat Sci & Engn, Res Ctr Energy Convers & Storage, Seoul 151744, South KoreaSeoul Natl Univ, Sch Mat Sci & Engn, Res Ctr Energy Convers & Storage, Seoul 151744, South Korea
Kim, C
[1
]
Park, B
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Sch Mat Sci & Engn, Res Ctr Energy Convers & Storage, Seoul 151744, South KoreaSeoul Natl Univ, Sch Mat Sci & Engn, Res Ctr Energy Convers & Storage, Seoul 151744, South Korea
Park, B
[1
]
机构:
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Res Ctr Energy Convers & Storage, Seoul 151744, South Korea
The effect of deposition temperature and film thickness on the electrochemical performance of amorphous-Si thin films deposited on a copper fail is studied. The electrochemical properties show optimum conditions at 200 degrees C deposition, and thinner films exhibit superior electrochemical performance than thicker ones. A film of 200 nm Si deposited at 200 degrees C exhibits excellent cycleability with a specific capacity of similar to 3000 mAh g(-1). This is probably due to optimization between the strong adhesion by Si/Cu interdiffusion and the film stress. (c) 2005 Elsevier B.V. All rights reserved.