Electrochemical performance of amorphous-silicon thin films for lithium rechargeable batteries

被引:96
作者
Moon, T [1 ]
Kim, C [1 ]
Park, B [1 ]
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Res Ctr Energy Convers & Storage, Seoul 151744, South Korea
关键词
amorphous silicon; thin film; deposition temperature; interdiffusion;
D O I
10.1016/j.jpowsour.2005.05.012
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effect of deposition temperature and film thickness on the electrochemical performance of amorphous-Si thin films deposited on a copper fail is studied. The electrochemical properties show optimum conditions at 200 degrees C deposition, and thinner films exhibit superior electrochemical performance than thicker ones. A film of 200 nm Si deposited at 200 degrees C exhibits excellent cycleability with a specific capacity of similar to 3000 mAh g(-1). This is probably due to optimization between the strong adhesion by Si/Cu interdiffusion and the film stress. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:391 / 394
页数:4
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