Thin-film CuIn1-xGaxSe2 photovoltaic cells from solution-based precursor layers

被引:61
作者
Bhattacharya, RN
Batchelor, W
Hiltner, JF
Sites, JR
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
[2] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA
关键词
D O I
10.1063/1.124716
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have fabricated 15.4% and 12.4% efficient thin-film CuIn1-xGaxSe2 (CIGS)-based photovoltaic devices from solution-based electrodeposited (ED) and electroless-deposited (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final semiconductor film composition to CuIn1-xGaxSe2. The ED and EL device parameters are compared with those of a 17.7% PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics. (C) 1999 American Institute of Physics. [S0003-6951(99)03736-5].
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收藏
页码:1431 / 1433
页数:3
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