Development of novel magnetic field monolithic sensors with standard CMOS compatible MEMS technology

被引：2

作者：

Baglio, S ^{[1
]}

Latorre, L ^{[1
]}

Nouet, P ^{[1
]}

机构：

[1] Univ Catania, Dipartimento Elettr Electtron & Sistemist, I-95125 Catania, Italy

来源：

SMART STRUCTURES AND MATERIALS 1999: SMART STRUCTURES AND INTEGRATED SYSTEMS, PTS 1 AND 2 | 1999年 / 3668卷

关键词：

microelectromechanical sensors; microsystems; sensor modeling and characterization; magnetic field sensor; CMOS sensors;

D O I：

10.1117/12.350721

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

In this paper novel Micro-Electro-Mechanical-Systems for magnetic field sensing are presented. These devices have been realized by using a micromachining approach which is fully compatible with standard CMOS technology. Several different structures have been developed and tested. Analytical system models have been defined in order to allow effective numerical simulation of the electro-mechanical system behavior. Both static and resonant working modes have been studied for different sensor architectures. Experimental results are reported regarding the metrological characterization of the devices. Particular attention has been also devoted to the effects of interfering inputs on the sensor output.

引用

页码：417 / 424

页数：8