Passively Q-switched microchip laser at 1.5 μm

被引：47

作者：

Häring, R ^{[1
]}

Paschotta, R ^{[1
]}

Fluck, R ^{[1
]}

Gini, E ^{[1
]}

Melchior, H ^{[1
]}

Keller, U ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Inst Quantum Elect, ETH Honggerberg, HPT, CH-8093 Zurich, Switzerland

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 2001年 / 18卷 / 12期

关键词：

D O I：

10.1364/JOSAB.18.001805

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a compact laser source in the eye-safe wavelength regime (approximate to1.5 mum) that produces peak powers up to 10.6 kW at pulse durations of 0.84 ns with a repetition rate exceeding I kHz. An Er:Yb:glass microchip laser was passively Q-switched with a semiconductor saturable absorber mirror (SESAM). We investigated SESAM damage under Q-switching conditions and developed an improved SESAM design that can withstand microjoule pulses. (C) 2001 Optical Society of America.

引用

页码：1805 / 1812

页数：8

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