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Effects of ZnO/MgO double buffer layers on structural quality and electron mobility of ZnO epitaxial films grown on c-plane sapphire

被引：47
作者：
Miyamoto, K
Sano, M
Kato, H
Yao, T
机构：
[1] Stanley Elect Co Ltd, Ctr Res & Dev, Aoba Ku, Yokohama, Kanagawa 2250014, Japan
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 11A期
关键词：
ZnO; plasma-assisted molecular beam epitaxy; c-sapphire; ZnO/MgO double-buffer layer; X-ray diffraction; electron mobility; dislocation scattering; secondary ion mass spectroscopy;
D O I：
10.1143/JJAP.41.L1203
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-electron-mobility ZnO epilayers were grown on c-plane sapphire with ZnO/MgO double-buffer layers by plasma-assisted, molecular beam epitaxy. Precisely controlled low growth rate of the double-buffer layers was crucial to the improvement of electrical properties. Both X-ray diffraction omega rocking curve measurement and calculated electron mobilities revealed that the improvement of electron mobility of ZnO films is due to a decrease in dislocation density. The highest electron mobility of 137 cm(2).V(-1)s(-1) in as-grown ZnO film was achieved at room temperature.
引用
收藏
页码：L1203 / L1205
页数：3
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